Samsung SSD MZ-N6E250BW 860 EVO M.2 SATA 250GB 2280 Internal SSD Single Unit Version Retail
Samsung SSD MZ-N6E250BW 860 EVO M.2 SATA 250GB 2280 Internal SSD Single Unit Version Retail
$118.69
The newest edition to the world's best-selling* SATA SSD series, the Samsung 860 EVO is specially designed to enhance performance of mainstream PCs and laptops. With the latest V-NAND technology, this fast and reliable SSD comes in a wide range of compatible form factors and capacities.
Enhanced performance Speeds are consistent, even under heavy workloads and multi-tasking allowing for faster file transfer. The 860 EVO performs at sequential read speeds up to 550 MB/s* with Intelligent TurboWrite technology, and sequential write speeds up to 520 MB/s. The TurboWrite buffer size* is upgraded from 12 GB to 78 GB.
Boosted endurance Up to 8x higher TBW (Terabytes Written)* than the 850 EVO. Feel secure storing and rendering large sized 4K videos and 3D data used by the latest applications.
Smart compatibility Benefit from faster, more fluid communication with your host system. The refined ECC* algorithm and a new MJX controller generate higher speeds, and the improved queued trim enhances Linux compatibility.
Multiple form factors Whatever size your computer needs, there is an 860 EVO for you. Choose among the 2.5-inch size for desktop PCs and laptops, and the SATA-based M.2 (2280) or the mSATA for ultra-slim computing devices.
Type Series :SSD 860 EVO Usage Application:Client PCs Interface:SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s SATA 1.5 Gb/s interface Storage Capacity 250 GB (1 GB equal to 1 Billion byte by IDEMA) Key Features Sequential Read Speed :Up to 550 MB/s Sequential Read Sequential Write Speed :Up to 520 MB/s Sequential Write Random Read Speed: - Random Read (4KB, QD32): -Up to 97,000 IOPS Random Read -Random Read (4KB, QD1) : Up to 10,000 IOPS Random Read Random Write Speed -Random Write (4KB, QD32) : Up to 88,000 IOPS Random Write -Random Write (4KB, QD1) : Up to 42,000 IOPS Random Write Controller Samsung MJX Controller NAND Type Samsung V-NAND 3bit MLC Cache Memory Samsung 250 GB Low Power DDR4 SDRAM Trim Support Yes AES Encryption AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive) S.M.A.R.T. Support Yes GC (Garbage Collection) Auto Garbage Collection Algorithm WWN Support World Wide Name supported Device Sleep Mode Support Yes Internal Storage Yes General Power Consumption (W) : -Average : 2.2 W -Maximum : 4.0 W (Burst mode) -Actual power consumption may vary depending on system hardware and configuration Reliability (MTBF) :1.5 Million Hours Reliability (MTBF) Environmental Specs Operating Temperature : 0-70 oC Operating Temperature Shock :1,500G 0.5ms (Half sine) Form Factor Product :M.2 SATA Software Management SW :Magician Software for SSD management Item Dimension ( L inchxW inchxH inch) 6 x 4 x 1 Weight 1.00 lb